Myasoedov Aleksandr Vladimirovich

Publications in Math-Net.Ru

1. Оптическая спектроскопия метаморфных гетероструктур с квантовыми точками InAs/InGaAs, излучающими в диапазоне $\sim$ 1.55 мкм
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 123:1 (2026),  3–12
2. Буферные структуры GaAs/Si, полученные методом газофазной эпитаксии из металлоорганических соединений
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  48–52
3. Влияние термической обработки на оптические и электрофизические свойства $\alpha$-GeTe
   
   Fizika Tverdogo Tela, 67:12 (2025),  2448–2452
4. Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  294–297
5. the features of the crystallization of an intermediate silicon layer during the transfer of a thin 3C-SiC(001) layer onto a 6H-SiC(0001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  11–14
6. Interaction of silicon carbide with silicon melt formed under conditions of direct bonding of epitaxial structures of 3C-SiC/Si and 6H-SiC wafers
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  501–504
7. Microstructure features of nanosized AsSb precipitates in LT-GaAsSb
   
   Fizika Tverdogo Tela, 65:12 (2023),  2309–2316
8. Structural transformation of $\alpha$- and $\kappa$-Ga$_2$O$_3$ thin films on sapphire upon annealing in air
   
   Fizika Tverdogo Tela, 65:10 (2023),  1715–1721
9. Detection and study of 60$^\circ$-rotation domains in $\alpha$-Ga$_2$O$_3$ using transmission electron microscopy
   
   Fizika Tverdogo Tela, 65:1 (2023),  43–48
10. Dislocation structure of AlN/SiC templates grown by sublimation
    
    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  648–651
11. Defect structure of $\alpha$-Ga$_2$O$_3$ film grown on a $m$-face sapphire substrate, according to transmission electron microscopy investigation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  26–29
12. The effect of AlN buffer layer morphology on the structural quality of a semipolar GaN layer grown on a Si(001) substrate, according to transmission electron microscopy data
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  51–54
13. Study of dentin structural features by computed microtomography and transmission electron microscopy
    
    Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020),  1449–1461
14. A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  50–54
15. An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  26–30
16. Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  36–39
17. Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers
    
    Fizika Tverdogo Tela, 61:12 (2019),  2317–2321
18. Asymmetry of the defect structure of semipolar GaN grown on Si(001)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018),  53–61
19. Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN
    
    Fizika Tverdogo Tela, 57:10 (2015),  1916–1921
20. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
    
    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
21. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
22. Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  25–32