Gadzhiev Idris Mirzebalovich

Publications in Math-Net.Ru

1. In memory of I.T. Serenkov. Silicon avalanche photodiode with photoresponse rise time less than 350 ps at wavelength 1064 nm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  15–18
2. Picosecond pulses generation by fiber laser with semiconductor optical amplifier in 1.06 $\mu$m spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  14–16
3. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
4. Generation of picosecond pulses by lasers with distributed feedback at a wavelength of 1064 nm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  12–15
5. Phosphorescence kinetics of singlet oxygen in HeLa cells suspension
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  33–36
6. Spectral characteristics of the DMEM cell-culture medium
   
   Zhurnal Tekhnicheskoi Fiziki, 88:9 (2018),  1344–1347
7. Luminescence of Radachlorin photosensitizer in aqueous solution under excitation at 405 and 660 nm
   
   Optics and Spectroscopy, 124:1 (2018),  51–55
8. Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  30–39
9. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
10. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
11. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
12. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  30–36
13. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1059–1064
14. RF linewidth in passively mode locked quantum well lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:3 (2013),  41–48
15. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  96–102
16. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  31–39
17. Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:2 (2012),  25–31
18. Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1095–1101
19. Passive mode-locked laser based on quantum dot superlattice
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  31–36
20. Features of mode locking in laser with quantum well in broad waveguide layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36
21. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49