Sleptsuk N

Publications in Math-Net.Ru

1. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
2. Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  991–994
3. Leakage currents in 4H-SiC JBS diodes
   
   Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  411–415
4. A DLTS study of 4H-SiC-based $p$–$n$ junctions fabricated by boron implantation
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1358–1362