Davydovskaja Klavdiya Sergeevna

Publications in Math-Net.Ru

1. Effect of irradiation temperature on the carrier removal rate in GaN
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
2. Temperature dependence of the carrier removal rate in 4H-SiC
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  482–484
3. Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  441–445
4. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
5. Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1532–1534
6. Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  311–316
7. A study of the effect of electron and proton irradiation on 4$H$-SiC device structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  63–67