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Stepanov Sergei Igorevich

Publications in Math-Net.Ru

  1. Structure and recombination properties of twin boundaries in $\kappa$-phase of gallium oxide

    Fizika Tverdogo Tela, 65:12 (2023),  2194–2197
  2. The effect of chemical-mechanical processing of silicon wafers on their surface morphology and strength

    Zhurnal Tekhnicheskoi Fiziki, 93:5 (2023),  643–653
  3. Record thick $\kappa(\varepsilon)$-Ga$_2$O$_3$ epitaxial layers grown on GaN/$c$-sapphire

    Zhurnal Tekhnicheskoi Fiziki, 93:3 (2023),  403–408
  4. Synthesis of thin single-crystalline $\alpha$-Cr$_2$O$_3$ layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  43–46
  5. Defect structure of $\alpha$-Ga$_2$O$_3$ film grown on a $m$-face sapphire substrate, according to transmission electron microscopy investigation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  26–29
  6. Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:22 (2022),  24–27
  7. Growth of thick $\varepsilon(\kappa)$-Ga$_2$O$_3$ films by halide vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  35–38
  8. Study of the mechanical strength of thin silicon wafers in the dependance on their surface treatment during thinning

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  28–32
  9. Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:14 (2022),  37–41
  10. Effect of ambient humidity on the electrical conductive properties of polymorphic Ga$_{2}$O$_{3}$ structures

    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  269–276
  11. Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  27–29
  12. Interfacial stresses and anomalous shape of pseudoelastic deformation curves in Ni$_{49}$Fe$_{18}$Ga$_{27}$Co$_{6}$ alloy crystals compressed along the [011]$_{A}$ axis

    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  873–881
  13. Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  789–792
  14. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000


© Steklov Math. Inst. of RAS, 2026