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Publications in Math-Net.Ru
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Structure and recombination properties of twin boundaries in $\kappa$-phase of gallium oxide
Fizika Tverdogo Tela, 65:12 (2023), 2194–2197
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The effect of chemical-mechanical processing of silicon wafers on their surface morphology and strength
Zhurnal Tekhnicheskoi Fiziki, 93:5 (2023), 643–653
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Record thick $\kappa(\varepsilon)$-Ga$_2$O$_3$ epitaxial layers grown on GaN/$c$-sapphire
Zhurnal Tekhnicheskoi Fiziki, 93:3 (2023), 403–408
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Synthesis of thin single-crystalline $\alpha$-Cr$_2$O$_3$ layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023), 43–46
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Defect structure of $\alpha$-Ga$_2$O$_3$ film grown on a $m$-face sapphire substrate, according to transmission electron microscopy investigation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023), 26–29
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Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:22 (2022), 24–27
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Growth of thick $\varepsilon(\kappa)$-Ga$_2$O$_3$ films by halide vapor phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022), 35–38
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Study of the mechanical strength of thin silicon wafers in the dependance on their surface treatment during thinning
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022), 28–32
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Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:14 (2022), 37–41
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Effect of ambient humidity on the electrical conductive properties of polymorphic Ga$_{2}$O$_{3}$ structures
Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 269–276
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Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 27–29
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Interfacial stresses and anomalous shape of pseudoelastic deformation curves in Ni$_{49}$Fe$_{18}$Ga$_{27}$Co$_{6}$ alloy crystals compressed along the [011]$_{A}$ axis
Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 873–881
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Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy
Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 789–792
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Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000
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