Panteleev Valerii Nikolaevich

Publications in Math-Net.Ru

1. Anisotropic stresses in $\mathrm{GaN}(11\bar20)$ layers on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate during hydride vapor phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  266–270
2. Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2123–2126
3. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
4. Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  12–14
5. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
6. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
7. Hexagonal AlN layers grown on sulfided Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
8. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates
   
   Fizika Tverdogo Tela, 59:4 (2017),  660–667
9. Local thermoelectric effects in wide-gap semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  921–924
10. The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga–HCl–NH$_3$–H$_2$–Ar system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015),  29–34
11. Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1191–1195
12. GaAs $p$–$i$–$n$ structures for X-ray detectors grown on Ge and GaAs substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  1–7
13. Generating broadband random Gaussian signals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:15 (2010),  102–110


14. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383