Marichev Artem Evgen'evich

Publications in Math-Net.Ru

1. Study of the mask shape effect on the spatial distribution of GaAs layer growth rate in MOCVD selective area epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  452–457
2. Optical characterization of InGaAsP/InP(001) heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  47–50
3. Development of the technology for production power laser conventers on wavelength 1.06 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  590–593
4. Replacing tunnel junctions in InP with conduction channels with GaP crystallites
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  52–54
5. Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  13–14
6. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
7. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
8. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
9. GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1641–1646
10. Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  25–31
11. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
12. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
13. Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  715–718