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Publications in Math-Net.Ru
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Выращивание твердого раствора GaInAsSbBi на подложке GaSb(100), разориентированной на 6$^\circ$ к плоскости (111)A
Fizika Tverdogo Tela, 67:12 (2025), 2363–2366
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Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition
Nanosystems: Physics, Chemistry, Mathematics, 14:5 (2023), 601–605
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Defects in GaInAsBi epitaxial films on Si(001) substrates
Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 652–657
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Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022), 24–27
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Al$_{x}$In$_{y}$Ga$_{1-x-y}$P$_{z}$As$_{1-z}$/GaAs heterostructures for photovoltaic converters
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 27–30
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Phase transitions in bismuth-containing elastostressed AlGaInSbBi–InSb heterosystems
Fizika Tverdogo Tela, 62:4 (2020), 523–528
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AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient
Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 648–653
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Isoperiodic Ga$_{x}$In$_{1-x}$Sb$_{y}$As$_{z}$P$_{1-y-z}$/InP heterostructures for planar $p$–$n$ photodiodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 38–41
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Polymer films with silver nanoparticles improve the spectral characteristics of photovoltaic converters
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 51–54
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Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures
Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1110–1114
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On the properties of isoparametric AlInGaAsP/InP heterostructures
Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 903–907
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Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 21–24
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Heterostructures Ga$_{x}$In$_{1-x}$As$_{y}$Bi$_{z}$Sb$_{1-y-z}$/InSb for photodetector devices
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 27–29
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Cascade solar cells based on GaP/Si/Ge nanoheterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019), 7–9
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The effect of bismuth on the structural perfection and the luminescent properties of thin-film elastically stressed Al$_{x}$In$_{y}$Ga$_{1-x-y}$Bi$_{z}$Sb$_{1-z}$/GaSb heterostructures
Fizika Tverdogo Tela, 60:7 (2018), 1277–1282
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Effect of the Ag nanoparticle concentration in TiO$_{2}$–Ag functional coatings on the characteristics of GaInP/GaAs/Ge photoconverters
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 860–864
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Study of the structural and luminescence properties of InAs/GaAs heterostructures with Bi-doped potential barriers
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 581–585
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AlInGaPAs/GaAs/Si heterostructures for photoelectric converters fabricated by pulsed laser deposition
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 75–80
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AlInPSbAs/InAs heterostructures for thermophotoelectric converters
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 3–8
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Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates
Fizika Tverdogo Tela, 58:9 (2016), 1695–1700
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Specific features of doping with antimony during the ion-beam crystallization of silicon
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 553–556
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Ion beam crystallization of InAs/GaAs(001) nanostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015), 102–110
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Features in the formation of Ge/Si multilayer nanostructures under ion-beam-assisted crystallization
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:16 (2013), 30–37
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Simulation and investigation of the GaAs and GaSb photovoltaic cell performance
Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011), 71–76
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