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Pashchenko Aleksandr Sergeevich

Publications in Math-Net.Ru

  1. Выращивание твердого раствора GaInAsSbBi на подложке GaSb(100), разориентированной на 6$^\circ$ к плоскости (111)A

    Fizika Tverdogo Tela, 67:12 (2025),  2363–2366
  2. Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

    Nanosystems: Physics, Chemistry, Mathematics, 14:5 (2023),  601–605
  3. Defects in GaInAsBi epitaxial films on Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  652–657
  4. Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  24–27
  5. Al$_{x}$In$_{y}$Ga$_{1-x-y}$P$_{z}$As$_{1-z}$/GaAs heterostructures for photovoltaic converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  27–30
  6. Phase transitions in bismuth-containing elastostressed AlGaInSbBi–InSb heterosystems

    Fizika Tverdogo Tela, 62:4 (2020),  523–528
  7. AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  648–653
  8. Isoperiodic Ga$_{x}$In$_{1-x}$Sb$_{y}$As$_{z}$P$_{1-y-z}$/InP heterostructures for planar $p$$n$ photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  38–41
  9. Polymer films with silver nanoparticles improve the spectral characteristics of photovoltaic converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  51–54
  10. Effect of bismuth on the properties of elastically stressed AlGaInAsP$\langle\mathrm{Bi}\rangle$/InP heterostructures

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1110–1114
  11. On the properties of isoparametric AlInGaAsP/InP heterostructures

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  903–907
  12. Ion-beam deposition of thin AlN films on Al$_{2}$O$_{3}$ substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  21–24
  13. Heterostructures Ga$_{x}$In$_{1-x}$As$_{y}$Bi$_{z}$Sb$_{1-y-z}$/InSb for photodetector devices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  27–29
  14. Cascade solar cells based on GaP/Si/Ge nanoheterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019),  7–9
  15. The effect of bismuth on the structural perfection and the luminescent properties of thin-film elastically stressed Al$_{x}$In$_{y}$Ga$_{1-x-y}$Bi$_{z}$Sb$_{1-z}$/GaSb heterostructures

    Fizika Tverdogo Tela, 60:7 (2018),  1277–1282
  16. Effect of the Ag nanoparticle concentration in TiO$_{2}$–Ag functional coatings on the characteristics of GaInP/GaAs/Ge photoconverters

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  860–864
  17. Study of the structural and luminescence properties of InAs/GaAs heterostructures with Bi-doped potential barriers

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  581–585
  18. AlInGaPAs/GaAs/Si heterostructures for photoelectric converters fabricated by pulsed laser deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  75–80
  19. AlInPSbAs/InAs heterostructures for thermophotoelectric converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018),  3–8
  20. Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates

    Fizika Tverdogo Tela, 58:9 (2016),  1695–1700
  21. Specific features of doping with antimony during the ion-beam crystallization of silicon

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  553–556
  22. Ion beam crystallization of InAs/GaAs(001) nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  102–110
  23. Features in the formation of Ge/Si multilayer nanostructures under ion-beam-assisted crystallization

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:16 (2013),  30–37
  24. Simulation and investigation of the GaAs and GaSb photovoltaic cell performance

    Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011),  71–76


© Steklov Math. Inst. of RAS, 2026