Redkov Aleksei Viktorovich

Publications in Math-Net.Ru

1. Влияние фазовых трансформаций на частоты молекулярных колебаний в пленках 2-метилбензимидазолперхлората С$_8$Н$_8$N$_2$–HClO$_4$
   
   Optics and Spectroscopy, 133:11 (2025),  1136–1140
2. Machine learning-based predictive modeling for SiC/Si thin film growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  31–35
3. The effect of tin on the properties of gallium nitride grown by hydride vapor-phase epitaxy
   
   Fizika Tverdogo Tela, 66:8 (2024),  1338–1343
4. Influence of the kinetics of atomic steps on the growth of multicomponent crystals at elevated supersaturation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:13 (2023),  35–38
5. Growth of SiC, AlN, and GaN films on silicon parts of arbitrary geometry for microelectromechanical applications
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:11 (2023),  3–6
6. Peculiarities of nucleation and growth of InGaN nanowires on SiC/Si substrates by HVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  24–28
7. Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  7–10
8. Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  22–25
9. Growth of a faceted pore in a crystal via Burton–Cabrera–Frank mechanism
   
   Fizika Tverdogo Tela, 61:12 (2019),  2385–2389
10. Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution
    
    Fizika Tverdogo Tela, 61:3 (2019),  433–440
11. Growing III–V semiconductor heterostructures on SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  24–27
12. A new trigonal (rhombohedral) sic phase: ab initio calculations, a symmetry analysis and the Raman spectra
    
    Fizika Tverdogo Tela, 60:10 (2018),  2022–2027
13. Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  414–420
14. Molecular dynamics simulation of the indentation of nanoscale films on a substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  64–72
15. Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions
    
    Fizika Tverdogo Tela, 57:12 (2015),  2451–2457
16. Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN
    
    Fizika Tverdogo Tela, 57:10 (2015),  1916–1921
17. Formation of silver fractal structures in ion-exchange glasses under poling
    
    Zhurnal Tekhnicheskoi Fiziki, 85:2 (2015),  112–117
18. Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions
    
    Fizika Tverdogo Tela, 56:12 (2014),  2440–2445
19. Formation of composite materials based on glasses containing a reductant
    
    Fizika Tverdogo Tela, 54:9 (2012),  1758–1763