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Publications in Math-Net.Ru
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High-temperature manganese diffusion into KDB-3 silicon: formation of Mn$_5$Si$_3$ and B$_6$Si phases, morphology and
electrophysical properties
Fizika i Tekhnika Poluprovodnikov, 59:10 (2025), 601–607
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Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron
Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 528–532
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The effect of negative magnetoresistance in silicon to create multifunctional sensors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021), 7–11
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Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material
Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 421–425
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Control of the magnetic properties of silicon with manganese atom nanoclusters
Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014), 139–141
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Specific features of magnetoresistance in overcompensated manganese-doped silicon
Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1014–1016
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Negative magnetoresistance in silicon with manganese-atom complexes [Mn]$_4$
Fizika i Tekhnika Poluprovodnikov, 44:9 (2010), 1181–1184
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Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:16 (2010), 11–18
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