Maltsev Petr Pavlovich

Publications in Math-Net.Ru

1. Measurement of radio transparency of polycrystalline CVD-diamond in millimeter-wave range by free-space method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  43–46
2. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
3. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
4. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
5. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
6. Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  535–539
7. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
8. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330
9. Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si$_{3}$N$_{4}$ passivation
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1434–1438
10. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
11. Laser-assisted simulation of transient radiation effects in heterostructure components based on А$^{\mathrm{III}}$В$^{\mathrm{V}}$ semiconductor compounds
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  223–228
12. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  195–203
13. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190
14. Photoluminescence of heterostructures containing an In$_x$Ga$_{1-x}$As quantum well with a high in content at different excitation powers
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1254–1257
15. Photoluminescence properties of modulation-doped In$_x$Al$_{1-x}$As/In$_y$Ga$_{1-y}$As/In$_x$Al$_{1-x}$As structures with strained inas and gaas nanoinserts in the quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1243–1253
16. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In$_{0.70}$Al$_{0.30}$As/In$_{0.76}$Ga$_{0.24}$As/In$_{0.70}$Al$_{0.30}$As structures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  942–950
17. Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  932–935
18. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  241–248
19. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In$_x$Ga$_{1-x}$As quantum well with InAs inserts
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  204–213
20. Application of photoluminescence spectroscopy to studies of In$_{0.38}$Al$_{0.62}$As/In$_{0.38}$Ga$_{0.62}$As/In$_{0.38}$Al$_{0.62}$As metamorphic nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  909–916
21. Photoluminescence studies of In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As metamorphic heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  658–666
22. MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  73–76
23. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As HEMT nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  67–72
24. Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1215–1220