Shemukhin Andrei Aleksandrovich

Publications in Math-Net.Ru

1. Effect of electron beam energy on charging characteristics of polymer composites with the inclusion of carbon nanotubes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:12 (2023),  34–38
2. Amorphization of silicon nanowires upon irradiation with argon ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  11–14
3. Influence of irradiation with argon ions on the filtration properties of multi-walled carbon nanotubes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  21–25
4. Influence of target temperature on the formation of a nanorelief under irradiation with gas cluster ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  3–6
5. Modification of carbon nanotubes wettability by ion irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1692–1696
6. Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1030–1036
7. Features of defect formation in the nanostructured silicon under ion irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  810–815
8. In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods
   
   Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018),  1900–1907
9. Study of the distribution profile of iron ions implanted into silicon
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  778–782
10. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
11. Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  535–538
12. Investigation of transmission of 1.7-MeV He$^+$ beams through porous alumina membranes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:5 (2014),  67–74
13. Fabrication of ultrafine silicon layers on sapphire
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  83–89