Chernyakov Anton Evgen'evich

Publications in Math-Net.Ru

1. Исследование предельных энергетических возможностей мощных ультрафиолетовых (370 nm) матричных излучателей: токовый и температурный факторы
   
   Optics and Spectroscopy, 133:11 (2025),  1172–1175
2. Photoluminescence of PbS quantum dots in an inorganic glass matrix excited by leds: spectra and quantum efficiency
   
   Optics and Spectroscopy, 133:10 (2025),  1068–1070
3. Reduction of external quantum efficiency of ultraviolet LEDs caused by overdoping of barriers with silicon
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  397–401
4. Оценка изменения функционального состояния человека с помощью методики критической частоты слияния мельканий: особенности светового воздействия и видов нагрузки
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:18 (2025),  13–15
5. Near-field radiation and the effect of non-uniformity of current density distribution in AlInGaN micro-leds
   
   Optics and Spectroscopy, 132:12 (2024),  1236–1239
6. The study of the impact of test-based and game-based intellectual workloads on human functional state
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:23 (2024),  62–64
7. Thermal resistance of LEDs based on a narrow-gap InAsSb solid solution
   
   Optics and Spectroscopy, 131:11 (2023),  1502–1504
8. On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  42–52
9. Thermal conductivity of hybrid SiC/Si substrates for the growth of LED heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023),  19–21
10. The electro-thermo-optical characteristics and limiting energy capabilities of high-power deep ultraviolet light emitting diodes $\lambda\approx$ 270 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:9 (2023),  17–20
11. The limiting energy capabilities of high-power AlInGaN LEDs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022),  33–36
12. Features of operation of high-power AlInGaN LEDs at high pulse currents
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  32–35
13. Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  45–48
14. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
15. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
16. On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1195–1201
17. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
18. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86
19. High-power AlGaInN LED chips with two-level metallization
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1287–1293
20. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
21. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  386–391
22. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  708–713
23. Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  219–223
24. Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  425–431
25. A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  390–396
26. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95