Usov Sergei Olegovich

Publications in Math-Net.Ru

1. Дифференциальная туннельная проводимость в лентах $n$-Bi$_2$Te$_{3-y}$Se$_y$, полученных спиннингованием расплава
   
   Fizika Tverdogo Tela, 67:12 (2025),  2257–2263
2. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
3. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
4. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
   
   Fizika Tverdogo Tela, 61:12 (2019),  2333
5. Selective epitaxial growth of III–N structures using ion-beam nanolithography
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
6. InGaN/GaN light-emitting diode microwires of submillimeter length
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
7. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
8. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
9. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
10. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
11. InGaN/GaN heterostructures grown by submonolayer deposition
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1357–1362
12. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
13. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  274–279
14. Formation of composite InGaN/GaN/InAlN quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1382–1386
15. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
16. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  857–863
17. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
18. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
19. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
20. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95