Nikolaev Andrei Evgen'evich

Publications in Math-Net.Ru

1. Control of elastic stress during the growth of heterostructures (Al)GaN/SiC
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  315–318
2. Effect of irradiation temperature on the carrier removal rate in GaN
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
3. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
4. Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  582–585
5. Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  49–52
6. Stress analysis of GaN-based heterostructures on silicon substrates
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  546–550
7. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
8. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
9. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
10. A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  50–54
11. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
12. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
13. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
14. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
15. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
16. Capacitance-voltage characteristics of (Al/Ti)/Al$_2$O$_3$/$n$-GaN MIS structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1061–1064
17. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
18. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  1–8
19. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
20. Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  31–36
21. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
22. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  274–279
23. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1615–1623
24. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
25. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  955–961
26. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  857–863
27. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
28. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
29. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
30. High growth rate of AlN in a planetary MOVPE reactor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  33–39
31. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95