Chernykh Mariya Yahayevna

Publications in Math-Net.Ru

1. Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022),  20–22
2. Gan-on-silicon growth features: controlled plastic deformation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  26–29
3. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
4. A superconducting joint for 2G HTS tapes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  18–20
5. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
6. Developing an approach based on the formation of YBa$_2$Cu$_3$O$_x$–interlayer–YBa$_2$Cu$_3$O$_x$ epitaxial structures with high current-carrying ability
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  47–53
7. A study of the effect of the oxygen index of the target on the critical characteristics of YBa$_2$Cu$_3$O$_x$ epitaxial layers formed by pulsed laser deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  58–63