Ezubchenko Ivan Sergeevich

Publications in Math-Net.Ru

1. Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  91–96
2. Magnetoresistance and symmetry of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024),  598–603
3. Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022),  20–22
4. Gan-on-silicon growth features: controlled plastic deformation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  26–29
5. Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  962–967
6. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
7. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
8. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636
9. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
   
   Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1275–1278