Rodin Pavel Borisovich

Publications in Math-Net.Ru

1. Direct current modulation of high-power semiconductor lasers by high-frequency limit-cycle in gallium arsenide avalanche diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:1 (2026),  36–40
2. Self-excitation of microwave-range auto-oscillations in avalanche gaas diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  44–47
3. Subnanosecond kinetics of recombination radiation of a high-voltage gallium arsenide diode in impact-ionization switching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  11–14
4. Collapsing Gunn domains as a mechanism of self-supporting conducting state in reversely biased high-voltage GaAs diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:20 (2022),  31–34
5. The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:16 (2022),  25–29
6. Wave effects in a coaxial transmission line under subnanosecond switching of a high-voltage diode in the delayed impact-ionization breakdown mode
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  32–35
7. Double avalanche injection in diode avalanche sharpeners
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  275–279
8. Subnanosecond avalanche switching simulations of $n^{+}$–$n$–$n^{+}$ silicon structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  401–406
9. Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without $p$–$n$ junctions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  66–73
10. Subnanosecond impact-ionization switching of silicon structures without $p$–$n$ junctions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:11 (2017),  55–62
11. Parameters of silicon carbide diode avalanche shapers for the picosecond range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  87–94
12. Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015),  1–7
13. Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded $p$–$n$ junctions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  80–87
14. Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:11 (2012),  78–87
15. Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  17–25