Koveshnikov Sergei Viktorovich

Publications in Math-Net.Ru

1. Diffusion of phosphorus and gallium from a deposited layer of gallium phosphide into silicon
   
   Fizika Tverdogo Tela, 64:11 (2022),  1648–1655
2. Radiation resistance of nickel-doped silicon solar cells
   
   Fizika Tverdogo Tela, 64:5 (2022),  519–521
3. Spectral dependende of the photoconductivity of varizon structures of the type Ge$_x$Si$_{1-x}$, obtained by diffusion technology
   
   Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  495–497
4. Comparative study of photocells based on silicon doped with nickel by various methods
   
   Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  438–440
5. Effect of nickel on the lifetime of charge carriers in silicon solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  128–133
6. An infrared radiation photoresistor based on silicon with nanoclusters of manganese atoms
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  12–15
7. Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  37–40
8. Studying the effect of doping with nickel on silicon-based solar cells with a deep $p$–$n$-junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  3–6
9. Влияние примесного состава $n$-Si на радиационное дефектообразование и деградацию времени жизни неосновных носителей заряда при $\gamma$-облучении
   
   Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1332–1338