Krivyakin Grigorii Konstantinovich

Publications in Math-Net.Ru

1. Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  13–16
2. Quantum size effects in germanium nanocrystals and amorphous nanoclusters in GeSi$_x$O$_y$ films
   
   Fizika Tverdogo Tela, 62:3 (2020),  434–441
3. Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films
   
   Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  643–647
4. Femtosecond laser annealing of multilayer thin-film structures based on amorphous germanium and silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  43–46
5. Crystallization of amorphous germanium films and multilayer $a$-Ge/$a$-Si structures upon exposure to nanosecond laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  423–429
6. On the formation of IR-light-emitting Ge nanocrystals in Ge:SiO$_{2}$ films
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1056–1065
7. Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1028–1033
8. Ion-beam synthesis of the crystalline Ge phase in SiO$_{x}$N$_{y}$ films upon annealing under high pressure
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  280–284
9. Formation and study of $p$–$i$–$n$ structures based on two-phase hydrogenated silicon with a germanium layer in the $i$-type region
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1420–1425
10. Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  952–957