Kamaev Gennady Nikolaevich

Publications in Math-Net.Ru

1. Mechanism of charge transport in ITO/[GeO$_x$]$_{(z)}$[SiO$_2$]$_{(1-z)}$ (0.25 $\le z\le1$)/$n^+$-Si MIS structures
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  363–369
2. Composition and optical properties of amorphous plasma-chemical silicon oxynitride of variable composition a-SiO$_x$N$_y$:H
   
   Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023),  575–582
3. Vertical ordering of amorphous Ge nanoclusters in multilayer $a$-Ge/$a$-Si:H heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  13–16
4. Effect of interfaces and thickness on the crystallization kinetics of amorphous germanium films
   
   Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  643–647
5. Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition
   
   Fizika Tverdogo Tela, 61:12 (2019),  2528–2535
6. Optical properties of nonstoichiometric silicon oxide SiO$_{x}$ ($x<$ 2)
   
   Optics and Spectroscopy, 127:5 (2019),  769–773
7. Optical properties of $p$–$i$–$n$ structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  952–957
8. Electrophysical properties of Si/SiO$_{2}$ nanostructures fabricated by direct bonding
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:11 (2016),  73–81
9. Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  334–339
10. A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012),  45–52