Tashmukhamedova Dilnoza Artikbaevna

Publications in Math-Net.Ru

1. Effect of strain on thermoEMF in the silicate glass doped with ruthenium dioxide
   
   Zhurnal Tekhnicheskoi Fiziki, 95:7 (2025),  1375–1384
2. Peculiarities of photoelectron spectra of Ge implanted with Na$^+$ ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  27–30
3. Adsorption of Ba atoms influences the composition, emission, and optical properties of CdS single crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  3–5
4. Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films
   
   Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020),  831–834
5. Effect of the disordering of thin surface layers on the electronic and optical properties of Si(111)
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1211–1216
6. Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  32–34
7. Escape depth of secondary and photoelectrons from CdTe films with a Ba film
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1115–1117
8. Electronic and optical properties of NiSi$_{2}$/Si nanofilms
   
   Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  759–761
9. The effect of the formation of silicides on the resistivity of silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  49–51
10. Composition and structure of Ga$_{1-x}$Na$_{x}$As nanolayers produced near the GaAs surface by Na$^+$ implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017),  1884–1886
11. Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment
    
    Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016),  148–150
12. Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015),  148–151
13. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods
    
    Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013),  146–149
14. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013),  66–70