Andreev Alexandr Aleksandrovich

Publications in Math-Net.Ru

1. Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  91–96
2. Magnetoresistance and symmetry of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024),  598–603
3. Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022),  20–22
4. Substrates with diamond heat sink for epitaxial GaN growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  13–16
5. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
6. Ohmic contacts to europium oxide for spintronic devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  38–40
7. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
8. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636
9. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
   
   Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1275–1278
10. Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:11 (2014),  80–86