Mayboroda Ivan Olegovich

Publications in Math-Net.Ru

1. Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022),  20–22
2. Substrates with diamond heat sink for epitaxial GaN growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  13–16
3. Specifics of heat transfer in Al$_{x}$Ga$_{1-x}$N/GaN heterostructures on sapphire
   
   Fizika Tverdogo Tela, 62:4 (2020),  635–639
4. Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  962–967
5. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
6. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
7. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636
8. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
   
   Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1275–1278
9. Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:11 (2014),  80–86