Konstantinov Viktor Olegovich

Publications in Math-Net.Ru

1. Influence of current density on the structure of thin films of amorphous silicon suboxide during electron beam annealing
   
   Prikl. Mekh. Tekh. Fiz., 64:5 (2023),  52–58
2. Measurement of silicon melt temperature during electron beam refining
   
   Prikl. Mekh. Tekh. Fiz., 64:5 (2023),  39–44
3. Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO$_2$] films using electron beam annealing
   
   Zhurnal Tekhnicheskoi Fiziki, 92:9 (2022),  1402–1409
4. Effect of annealing temperature on the kinetics of aluminum-induced crystallization of silicon suboxide thin films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  39–42
5. Gold-induced crystallization of thin films of amorphous silicon suboxide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  35–38
6. Electron-beam crystallization of thin films of amorphous silicon suboxide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  26–28
7. Deposition of amorphous and microcrystalline silicon films by gas-jet plasma-chemical method
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1721–1725
8. Deposition of silicon films doped with boron and phosphorus by the gas-jet plasma-chemical method
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  132–136
9. High-efficiency electron source with a hollow cathode in technologies of thin film deposition and surface treatment under forevacuum pressures
   
   Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018),  914–919
10. Measuring the temperature and concentration secondary electrons in an argon electron-beam plasma
    
    Prikl. Mekh. Tekh. Fiz., 59:5 (2018),  115–122
11. Silicon film deposition using a gas-jet plasma-chemical method: experiment and gas-dynamic simulation
    
    Prikl. Mekh. Tekh. Fiz., 59:5 (2018),  22–30
12. Gas flow activated in an electron-beam plasma
    
    Prikl. Mekh. Tekh. Fiz., 48:1 (2007),  3–10