Tsai Jung-Hui

Publications in Math-Net.Ru

1. Thermal stability of HfO$_2$|AlGaN|GaN normally-Off transistors with Ni|Au and Pt gate metals
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  618
2. Investigation of Pd|HfO$_2$|AlGaN|GaN enhancement-mode high electron mobility transistor with sensitization, activation, and electroless-plating approaches
   
   Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  684
3. Comparative studies of AlGaAs/InGaAs enhancement/depletion-mode high electron mobility transistors with virtual channel layers by hybrid gate recesses approaches
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  430
4. Comparative Investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs Heterojunction Bipolar Transistors
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1407–1410
5. Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped–channel field–effect transistors
   
   Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  261–265
6. Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1254–1257
7. Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors
   
   Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  833–838
8. Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP pacer at base-collector junction
   
   Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1400–1405
9. MOS solar cells with oxides deposited by sol-gel spin-coating techniques
   
   Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  825–827
10. Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1619–1624
11. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower $\delta$-doped supplied layers
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  530–534
12. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1279–1281
13. A New InGaP/GaAs Tunneling Heterostructure–Emitter Bipolar Transistor (T-HEBT)
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  657–659
14. InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1130–1134
15. InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  235–239