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Publications in Math-Net.Ru
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Thermal stability of HfO$_2$|AlGaN|GaN normally-Off transistors with Ni|Au and Pt gate metals
Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 618
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Investigation of Pd|HfO$_2$|AlGaN|GaN enhancement-mode high electron mobility transistor with sensitization, activation, and electroless-plating approaches
Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 684
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Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors
Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1254–1257
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Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP pacer at base-collector junction
Fizika i Tekhnika Poluprovodnikov, 47:10 (2013), 1400–1405
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Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple $\delta$-doped sheets
Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 214–218
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InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures
Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1130–1134
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