Gassoumi Malek

Publications in Math-Net.Ru

1. Improvement in electrical and 2DEG properties of Al$_{0.26}$Ga$_{0.74}$N|GaN|Si HEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  285
2. Conductance deep-level transient spectroscopy and current transport mechanisms in Au|Pt|$n$-GaN Schottky barrier diodes
   
   Fizika Tverdogo Tela, 62:4 (2020),  555
3. Characterization of deep levels in lGaN|GaN HEMT by FT-DLTS and current DLTS
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1099
4. Effect of surface passivation by SiN/SiO$_2$ of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  1002–1005
5. Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si$_3$N$_4$ by CDLTS
   
   Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  396–399