Lastovsky Stanislav Bronislavovich

Publications in Math-Net.Ru

1. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation
   
   Fizika Tverdogo Tela, 64:12 (2022),  1915
2. Te-hyperdoped silicon layers for visible-to-infrared photodiodes
   
   Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2026–2037
3. Radiation-induced bistable centers with deep levels in silicon $n^{+}$–$p$ structures
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  767–771
4. Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in $n$- and $p$-type silicon
   
   Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1492–1498
5. Formation and annealing of radiation defects in tin-doped $p$-type germanium crystals
   
   Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  629–632
6. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
   
   Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  397–401