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Publications in Math-Net.Ru
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Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023), 5–8
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Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
Fizika i Tekhnika Poluprovodnikov, 56:1 (2022), 134–138
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Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering
Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1975–1983
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Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26
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Resistive switching in memristors based on Ag/Ge/Si heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46
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Production of Si- and Ge-based thermoelectric materials by spark plasma sintering
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1455–1459
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Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters
Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 470
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Optical thyristor based on GaAs/InGaP materials
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1443–1446
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A holographic method of the quantitative measurement of photolithographic replicas of thick raised surface defects
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:11 (2017), 81–87
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