Sherstnev E V

Publications in Math-Net.Ru

1. Radiation of a short high-current vacuum arc in the vacuum ultraviolet
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:24 (2024),  40–43
2. Development of a technique for quantitative comparison of optical power of self-glowing crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  12–16
3. In memory of I.T. Serenkov. Silicon avalanche photodiode with photoresponse rise time less than 350 ps at wavelength 1064 nm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  15–18
4. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
5. In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  3–6
6. Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks
   
   Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  1922–1929
7. Radiation power of a high-current vacuum arc stabilized by an axial magnetic field in the visible and UV ranges of the spectrum
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  18–20
8. Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
   
   Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1386–1392
9. Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup
   
   Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020),  693–698
10. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
11. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
12. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
13. Defect structure of GaAs layers implanted with nitrogen ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  24–30
14. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
15. Photoresponse recovery in silicon photodiodes upon VUV irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  178–181
16. Utilization of silicon detectors with “ideal-diode” current-voltage characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  174–177