Protasov Dmitrii Yur'evich

Publications in Math-Net.Ru

1. The electrochemical profiling of $n^+/n$ GaAs structures for field-effect transistors
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  53–61
2. InSb/GaAs heterostructures for magnetic field sensors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  27–30
3. AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  20–23
4. The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  11–14
5. GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1727–1731
6. AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  3–6
7. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
8. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  48–56
9. Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  77–84
10. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1696
11. MBE-grown AlGaN/GaN heterostructures for UV photodetectors
    
    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  67–73
12. Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1329–1334
13. Chromium mask for plasma-chemical etching of Al$_x$Ga$_{1-x}$N layers
    
    Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014),  96–99
14. Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir–Blodgett method
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1237–1242
15. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  36–47