Berezovskaya Tamara Narcissovna

Publications in Math-Net.Ru

1. Fabrication of a blazed diffraction grating with variable line space
   
   Zhurnal Tekhnicheskoi Fiziki, 95:10 (2025),  1861–1869
2. High-frequency low-blaze-angle Mo/Be diffraction gratings – efficiency study
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1128–1135
3. High-frequency multilayer diffraction Si-gratings with a low blaze angle – fabrication
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1119–1127
4. Blazed silicon gratings for soft X-ray and extreme ultraviolet radiation: the effect of groove profile shape and random roughness on the diffraction efficiency
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  859–866
5. Optimization of triangular-profiled Si-grating fabrication technology for EUV and SXR applications
   
   Zhurnal Tekhnicheskoi Fiziki, 92:8 (2022),  1192–1198
6. Fabrication and testing of Au- and multilayer Mo/Si-coated diffraction gratings with high-order brilliance in high orders in the soft X-ray and EUV ranges
   
   Kvantovaya Elektronika, 52:10 (2022),  955–962
7. Blazed diffraction gratings on Si – first results
   
   Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1538–1547
8. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates
   
   Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
9. The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1726–1732
10. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
11. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
12. The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  47–54
13. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  87–94
14. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102
15. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1434–1438