Kruglov Aleksandr Valer'evich

Publications in Math-Net.Ru

1. Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1733–1743
2. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
3. Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  5–8
4. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
5. Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks
   
   Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1474–1478
6. Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  23–26
7. The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021),  30–32
8. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
9. Resistive switching in memristors based on Ag/Ge/Si heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  44–46
10. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
11. MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  345–350
12. Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1411–1414