Samartsev Il'ya Vladimirovich

Publications in Math-Net.Ru

1. Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  48–52
2. Metamorphic InGaAs photodiode with wavelength 1.55 $\mu$m, grown on GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  709–713
3. Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  156–160
4. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
5. Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  134–138
6. Methods for switching radiation polarization in GaAs laser diodes
   
   Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
7. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
8. GaAs-based laser diode with InGaAs waveguide quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
9. Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1460–1463
10. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
11. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
12. Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1619–1622