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Aksenov Maxim Sergeevich

Publications in Math-Net.Ru

  1. Nonlinear Hall coefficient in films of a three-dimensional topological insulator

    Pis'ma v Zh. Èksper. Teoret. Fiz., 120:3 (2024),  208–213
  2. Oxide/InAs(001) interface passivation with fluorine

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  6–9
  3. Determination of the donor impurity concentration in thin $i$-InGaAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  40–42
  4. High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1158–1163
  5. The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021),  11–14
  6. Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  10–13
  7. High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  52–54
  8. The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  59–62
  9. Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  83–89
  10. Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  322–326


© Steklov Math. Inst. of RAS, 2026