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Publications in Math-Net.Ru
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High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163
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The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021), 11–14
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Effect of oxygen and fluorine absorption on the electronic structure of the InSb(111) surface
Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 3–12
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Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 10–13
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A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078
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High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54
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The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62
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Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 83–89
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Chromium mask for plasma-chemical etching of Al$_x$Ga$_{1-x}$N layers
Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014), 96–99
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Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface
Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 322–326
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Study of the morphology and optical properties of anodic oxide layers on InAs (111)III
Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 532–537
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Formation of anodic layers on InAs (111)III. Study of the chemical composition
Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 569–575
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Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption
Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 53–59
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