Chistokhin Igor' Borisovich

Publications in Math-Net.Ru

1. InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  783–794
2. High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1158–1163
3. The influence of the conditions of getter formation in high-resistivity silicon on the characteristics of PIN photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  11–13
4. A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1071–1078
5. High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  52–54
6. The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  59–62
7. Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018),  19–25
8. Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  83–89
9. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix
   
   Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  936–940
10. Current instabilities in photoresistance based on selenium-doped silicon
    
    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1529–1535