Kontrosh Evgenii Vladimirovich

Publications in Math-Net.Ru

1. Импульсные характеристики однопереходных и трёхпереходных фотопреобразователей лазерного излучения
   
   Optics and Spectroscopy, 133:11 (2025),  1145–1149
2. Generation of microwave pulses by zero-bias monolithic triple-junction AlGaAs/GaAs $p$–$i$–$n$ photoconverters and modules
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  27–30
3. Determination of local thermal conductivity of soldered joints of InGaP/Ga(In)As/Ge heterostructure with heat-dissipating AlN ceramics based on Sn$_{42}$Bi$_{58}$ alloy by laser photodeflection microscopy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  31–34
4. Monolithic triple-junction $p$–$i$–$n$ AlGaAs/GaAs laser photoconverter
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  35–38
5. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
6. High-power subnanosecond module based on $p$–$i$–$n$ AlGaAs/GaAs photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  5–8
7. Subnanosecond AlGaAs/GaAs photodetectors with Bragg reflectors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  38–41
8. Tunnel diodes $n^{++}$-GaAs:($\delta$-Si)/$p^{++}$-Al$_{0.4}$Ga$_{0.6}$As:(C) for connecting elements of multijunction laser photoconverters
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  39–42
9. Degradation study of subnanosecond photovoltaic module parameters during thermocycling
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  44–46
10. Investigation of radiation resistance of heterostructure silicon solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  18–21
11. Development and study of a model of an autonomous energy information station of free space optical communication
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  21–25
12. Power source based on Al$_{0.8}$Ga$_{0.2}$As/GaAs photovoltaic converter and YPO$_4$:Eu/($^{238}$Pu) radioluminescent emitter
    
    Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1875–1880
13. Studies of the thermal conductivity and thermal resistance of solder layers with lead-free pastes by the photodeflection method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:22 (2022),  39–42
14. Mesa architecture and efficiency of InGaP/Ga(In)As/Ge solar cells
    
    Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1067–1074
15. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
16. Hybrid solar cells with a sunlight concentrator system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  52–54
17. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
18. Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  25–31
19. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
20. Radiation resistance of $\alpha$-Si:H/Si heterojunction solar cells with a thin $i$-$\alpha$-Si:H inner layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  95–102
21. A study of the heat-removal process at the semiconductor–ceramics interface in solar cells by the laser thermal-wave method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:11 (2016),  33–40
22. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88
23. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1249–1253