Publications in Math-Net.Ru
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Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 22–25
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MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric
Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 243–249
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Topology of PbSnTe:In layers versus indium concentration
Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 1040–1044
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Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 796–800
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Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion
Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1795–1799
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Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1574–1578
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