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Publications in Math-Net.Ru
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Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors
Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023), 281–285
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Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021), 367
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Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions
Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1575–1584
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Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties
Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 938–947
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Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 501–506
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Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 481–496
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Porous silicon and its applications in biology and medicine
Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014), 67–78
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Surface of porous silicon under hydrophilization and hydrolytic degradation
Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1243–1248
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