Sobolev Maxim Sergeevich

Publications in Math-Net.Ru

1. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications
   
   Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
2. Temperature analysis of dark current in pin-photodiodes based on In$_{0.83}$Ga$_{0.17}$As/InP epitaxial heterostructures with metamorphic buffer layers
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  358–364
3. Study of active regions based on multiperiod GaAsN/InAs superlattice
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
4. Changes in the electronic properties of the GaN/Si(111) surface under Li adsorption
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  961–965
5. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080
6. High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  7–10
7. Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1906–1912
8. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
9. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
10. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
11. Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  524
12. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102
13. GaAs/InGaAsN heterostructures for multi-junction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
14. The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19
15. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1448–1452
16. MBE growth of GaP on a Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  569–572
17. Photoluminescence of heterostructures with GaP$_{1-x}$N$_x$ and GaP$_{1-x-y}$N$_x$As$_y$ layers grown on GaP and Si substrates by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  489–493
18. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1640–1645
19. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  518–522
20. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  407–411
21. Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  81–87
22. Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  815–819
23. Optical properties of quantum-confined heterostructures based on GaP$_x$N$_y$As$_{1-x-y}$ alloys
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1209–1213