Pirogov Evgenii Viktorovich

Publications in Math-Net.Ru

1. Fabrication of a blazed diffraction grating with variable line space
   
   Zhurnal Tekhnicheskoi Fiziki, 95:10 (2025),  1861–1869
2. Photoelectric laser radiation converter $\lambda$ = 1064 nm based on GaInAsP/InP
   
   Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  447–451
3. Ferroelectric properties of (Al,Ga)InP$_2$ alloys
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  130–135
4. Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025),  39–43
5. Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  7–10
6. High-frequency low-blaze-angle Mo/Be diffraction gratings – efficiency study
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1128–1135
7. High-frequency multilayer diffraction Si-gratings with a low blaze angle – fabrication
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1119–1127
8. Impact of the atomic ordering degree on the ferroelectric properties of GaInP$_2$ alloys
   
   Optics and Spectroscopy, 132:11 (2024),  1127–1130
9. Temperature analysis of dark current in pin-photodiodes based on In$_{0.83}$Ga$_{0.17}$As/InP epitaxial heterostructures with metamorphic buffer layers
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  358–364
10. Blazed silicon gratings for soft X-ray and extreme ultraviolet radiation: the effect of groove profile shape and random roughness on the diffraction efficiency
    
    Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  859–866
11. Effect of nitrogen plasma treatment on the structural and optical properties of InGaN
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  32–35
12. Optimization of triangular-profiled Si-grating fabrication technology for EUV and SXR applications
    
    Zhurnal Tekhnicheskoi Fiziki, 92:8 (2022),  1192–1198
13. Study of active regions based on multiperiod GaAsN/InAs superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
14. Fabrication and testing of Au- and multilayer Mo/Si-coated diffraction gratings with high-order brilliance in high orders in the soft X-ray and EUV ranges
    
    Kvantovaya Elektronika, 52:10 (2022),  955–962
15. Blazed diffraction gratings on Si – first results
    
    Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1538–1547
16. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080
17. High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  7–10
18. Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1906–1912
19. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102
20. GaAs/InGaAsN heterostructures for multi-junction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
21. The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19
22. MBE growth of GaP on a Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  569–572
23. Photoluminescence of heterostructures with GaP$_{1-x}$N$_x$ and GaP$_{1-x-y}$N$_x$As$_y$ layers grown on GaP and Si substrates by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  489–493
24. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1640–1645
25. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  518–522
26. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  407–411
27. Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  81–87
28. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  950–954
29. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  923–927
30. Optical properties of quaternary GaN$_x$As$_y$P$_{1-x-y}$ semiconductor alloys
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  886–890