Nikitina Ekaterina Viktorovna

Publications in Math-Net.Ru

1. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
2. Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  7–10
3. Analysis of Zn diffusion process from the vapor phase in InGaAs/InP materials
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  48–52
4. Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  3–6
5. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
6. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080
7. High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  7–10
8. Correcting the characteristics of silicon photodiodes by ion implantation
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  557–563
9. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
10. The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1726–1732
11. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
12. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
13. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
14. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
15. Experimental study of spontaneous emission in Bragg multiple- quantum-well structures with InAs single-layer quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  736–740
16. Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  524
17. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
18. The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  47–54
19. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102
20. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
    
    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
21. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
22. GaAs/InGaAsN heterostructures for multi-junction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
23. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
24. The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19
25. Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-$\mu$m under current pumping
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1574–1577
26. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1448–1452
27. MBE growth of GaP on a Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  569–572
28. Admittance spectroscopy of solar cells based on GaPNAs layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  534–538
29. Photoluminescence of heterostructures with GaP$_{1-x}$N$_x$ and GaP$_{1-x-y}$N$_x$As$_y$ layers grown on GaP and Si substrates by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  489–493
30. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  283–286
31. Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1697–1703
32. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1640–1645
33. Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  774–780
34. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  518–522
35. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  407–411
36. Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  396–401
37. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  88–94
38. Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  81–87
39. Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1039–1042
40. Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  815–819
41. Matrices of 960-nm vertical-cavity surface-emitting lasers
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  836–839
42. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  950–954