Umirzakov Baltokhodzha Ermatovich

Publications in Math-Net.Ru

1. Peculiarities of photoelectron spectra of Ge implanted with Na$^+$ ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  27–30
2. Influence of Ba atom adsorption and implantation of Ba$^+$ ions on the electronic structure of single crystalline Ge
   
   Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022),  638–642
3. Composition and electronic structure of hidden nanoscale phases and layers of BaSi$_2$ formed in the near-surface of Si
   
   Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  491–494
4. Influence of preliminary ion bombardment on the formation of Co and CoSi$_2$ nanofilms on Si surface during solid-phase deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  27–29
5. Pseudogap, nanocrystals and electrical conductivity of doped silicate glass
   
   Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021),  281–286
6. Composition and morphology of Si(111) surface with SiO$_{2}$ film of different thickness
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1045–1048
7. Study of the critical angle of channeling of active metal ions through thin aluminum films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  12–14
8. Adsorption of Ba atoms influences the composition, emission, and optical properties of CdS single crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  3–5
9. The effect of stepwise postimplantation annealing on the composition and structure of silicon surface layers implanted with alkali metal ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:1 (2021),  15–19
10. Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films
    
    Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020),  831–834
11. Modification of the surface properties of free Si–Cu films by implantation of active metal ions
    
    Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020),  123–127
12. Effect of the disordering of thin surface layers on the electronic and optical properties of Si(111)
    
    Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1211–1216
13. Effect of the implantation of Al$^+$ ions on the composition, electronic and crystalline structure of the GaP(111) surface
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  716–719
14. Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  32–34
15. Emissivity of laser-activated Pd–Ba alloy
    
    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1626–1629
16. Variation of the crystal structure on Si(111) surface induced by ion bombardment and subsequent annealing
    
    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1611–1614
17. Electronic and optical properties of GaAlAs/GaAs thin films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1589–1591
18. Escape depth of secondary and photoelectrons from CdTe films with a Ba film
    
    Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1115–1117
19. Formation of nanodimensional SiO$_{2}$ films on the surface of a free si/cu film system by O$_{2}^{+}$ ion implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  935–937
20. Electronic and optical properties of NiSi$_{2}$/Si nanofilms
    
    Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  759–761
21. The morphology and electronic properties of si nanoscale structures on a CaF$_{2}$ surface
    
    Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019),  264–267
22. The effect of the formation of silicides on the resistivity of silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  49–51
23. Structure and properties of a bilayer nanodimensional CoSi$_{2}$/Si/CoSi$_{2}$/Si system obtained by ion implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018),  1859–1862
24. Composition and structure of Ga$_{1-x}$Na$_{x}$As nanolayers produced near the GaAs surface by Na$^+$ implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017),  1884–1886
25. Transmission of electromagnetic waves through thin Cu films
    
    Zhurnal Tekhnicheskoi Fiziki, 86:6 (2016),  156–158
26. Composition, morphology, and electronic structure of the nanophases created on the SiO$_{2}$ Surface by Ar$^{+}$ ion bombardment
    
    Zhurnal Tekhnicheskoi Fiziki, 86:4 (2016),  148–150
27. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface
    
    Zhurnal Tekhnicheskoi Fiziki, 85:12 (2015),  146–149
28. Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 85:10 (2015),  148–151
29. Analysis of profiles of atomic distribution over the depth of Si–Me free nanofilm systems
    
    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  123–125
30. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods
    
    Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013),  146–149
31. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation
    
    Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013),  66–70
32. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission
    
    Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011),  117–120