Vinichenko Aleksandr Nikolaevich

Publications in Math-Net.Ru

1. Influence of tellurium and zinc stoichiometry on the ellipsometric spectra of ZnTe/GaAs (100)
   
   Optics and Spectroscopy, 133:3 (2025),  274–280
2. Temperature influence on the crystal structure of CdTe(111) films grown by molecular-beam epitaxy on GaAs(100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  141–149
3. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
4. Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures
   
   Optics and Spectroscopy, 128:7 (2020),  1004–1011
5. Electron-quantum transport in pseudomorphic and metamorphic In$_{0.2}$Ga$_{0.8}$As-based quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  359–364
6. Nonuniversal scaling behavior of conductivity peak widths in the quantum Hall effect in InGaAs/InAlAs structures
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1447–1454
7. Transport in short-period GaAs/AlAs superlattices with electric domains
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  472
8. Electron transport in phemt AlGaAs/InGaAs/GaAs РНЕМТ quantum wells at different temperatures: influence of one-side $\delta$-Si doping
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  201–206
9. Electron effective mass and momentum relaxation time in one-sided $\delta$-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells with high electron density
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  120–127
10. Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  34–41
11. The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  11–17
12. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
13. Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1669–1674
14. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  567–573
15. Photoluminescence of GaAs/AlGaAs quantum ring arrays
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  652–657
16. Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1660–1665
17. Technology and electronic properties of PHEMT AlGaAs/In$_{y(z)}$Ga$_{1-y(z)}$As/GaAs compositionally graded quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1258–1264