Baidus Nikolai Vladimirovich

Publications in Math-Net.Ru

1. Термоэлектрические свойства квантовых точек InGaAs/GaAs
   
   Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  149–160
2. Influence of emitter region doping level on the turn-on dynamics of low-voltage GaAs dynistors
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  48–52
3. Magnetically controlled spin light-emitting diode
   
   UFN, 195:5 (2025),  543–556
4. Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes
   
   Fizika Tverdogo Tela, 66:2 (2024),  184–189
5. Metamorphic InGaAs photodiode with wavelength 1.55 $\mu$m, grown on GaAs substrate
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  709–713
6. Influence of strip mesastructure topology on a low-voltage GaAs thyristor main parameters
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  156–160
7. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
8. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  833–838
9. Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  134–138
10. Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots
    
    Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1431–1440
11. Comparison of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
12. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
13. GaAs-based laser diode with InGaAs waveguide quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
14. Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1271–1274
15. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
16. MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons
    
    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  345–350
17. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
18. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
19. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
20. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
21. Optical thyristor based on GaAs/InGaP materials
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
22. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
23. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  75–78
24. Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1576–1582
25. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
26. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
27. Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  804–809
28. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  370–375
29. Exchange enhancement of the electron $g$ factor in strained InGaAs/InP heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  196–203
30. Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  145–148
31. Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  122–127
32. Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  58–62
33. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing $\delta$-doped layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  53–57
34. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  3–5
35. Far-infrared radiation from $n$-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  643–647
36. Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1497–1503
37. Long-term decay of photoconductivity in $n$-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1609–1612
38. Heterostructures with GaAs/AlGaAs superlattices grown by MOCVD: growth features, optical and transport characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1593–1596
39. Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1561–1565
40. Determination of the electron concentration and mobility in the vicinity of a quantum well and $\delta$-doped layer in InGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1532–1536
41. Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1510–1514
42. Transport properties of InGaAs/GaAs Heterostructures with $\delta$-doped quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  649–654
43. Lateral transport and far-infrared radiation of electrons in In$_x$Ga$_{1-x}$As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1543–1546
44. Electron states of InP surface modified by treatment in sulphur vapours
    
    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1983–1985
45. Photoelectron effects in GaAs layers with quantum heteropit built-in on the surface
    
    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1886–1893
46. Effect of sulphidation on surface state and photoelectric properties of InP and GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1383–1389