Pavlov Dmitrii Alekseevich

Publications in Math-Net.Ru

1. Comparison of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
2. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
3. Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1129–1133
4. Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020),  17–20
5. Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1271–1274
6. On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1233–1236
7. Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  33–36
8. X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions
   
   Fizika Tverdogo Tela, 60:3 (2018),  591–595
9. Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1421–1424
10. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
11. Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature
    
    Fizika Tverdogo Tela, 59:11 (2017),  2200–2202
12. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures
    
    Fizika Tverdogo Tela, 59:5 (2017),  965–971
13. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
14. Features of the selective manganese doping of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
15. Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1447–1450
16. Formation of hexagonal 9$R$ silicon polytype by ion implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  87–92
17. On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1473–1478
18. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
19. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
20. Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  72–79
21. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
22. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
23. Study of the crystal structure of silicon nanoislands on sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  160–162
24. Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  122–127
25. Epitaxial growth of hexagonal silicon polytypes on sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  98–101
26. Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  58–62
27. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  11–14
28. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  3–5
29. Formation of Au$_4$Zr nanocrystals in yttria stabilized zirconia in the course of implantation of gold ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015),  62–70
30. Epitaxial growth of MnGa/GaAs layers for diodes with spin injection
    
    Fizika Tverdogo Tela, 56:10 (2014),  2062–2065
31. Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities
    
    Fizika Tverdogo Tela, 56:3 (2014),  607–610
32. Effect of ion doping on the dislocation-related photoluminescence in Si$^+$-implanted silicon
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  212–216
33. Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  44–48
34. Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  9–16
35. Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films
    
    Fizika Tverdogo Tela, 55:11 (2013),  2243–2249
36. Growth model of silicon nanoislands on sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1621–1623
37. Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  854–858
38. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO$_2$
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  460–465
39. Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1510–1514
40. Peculiarities in the formation of gold nanoparticles by ion implantation in stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:4 (2012),  60–65
41. Growing nanocrystalline silicon on sapphire by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  16–22