Bolshakov Aleksei Dmitrievich

Publications in Math-Net.Ru

1. Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025),  39–43
2. The manifestation of ordered generation in a disordered environment of ZnO whiskers
   
   Fizika Tverdogo Tela, 66:7 (2024),  1180–1184
3. Random laser generation in ZnO nanocrystals grown by hydrothermal method
   
   Fizika Tverdogo Tela, 66:1 (2024),  17–21
4. Interaction between a silicon nanowires surface and molecules of NH$_3$ and HCl: DFT model and experiment
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  533–536
5. Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  969–972
6. Peculiarities of magnetron sputtering of nickel oxide thin films for use in perovskite solar cells
   
   Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  460–464
7. Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  475
8. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires
   
   Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1543–1547
9. Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  15–23
10. Simulation of growth and shape of nanowires in the absence of a catalyst
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  55–63
11. Lateral growth and shape of semiconductor nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  53–59
12. Modeling InAs quantum-dot formation on the side surface of GaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  39–50
13. Calculating GaAs semiconductor nanoneedle size distribution
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:8 (2012),  10–16
14. Surface energy and modes of catalytic growth of semiconductor nanowhiskers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  21–30