Shtrom Igor' Viktorovich

Publications in Math-Net.Ru

1. Влияние дизайна буферного слоя на фотолюминесценцию InAs квантовых точек, выращенных на подложках GaAs/Si(100)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  16–21
2. GaN microrods growth by combined PA-MBE/HVPE method
   
   Fizika Tverdogo Tela, 67:6 (2025),  934–939
3. Energy transfer in system of GaAs/AlGaAs quantum wells with different thickness and thick barriers
   
   Fizika Tverdogo Tela, 67:1 (2025),  28–30
4. Investigation of the temperature dependence of the exciton and free carrier contribution to the luminescence of the CdTe/CdMgTe heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  379–382
5. The variation of the growth direction of planar nanowire
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  195–198
6. The manifestation of ordered generation in a disordered environment of ZnO whiskers
   
   Fizika Tverdogo Tela, 66:7 (2024),  1180–1184
7. Random laser generation in ZnO nanocrystals grown by hydrothermal method
   
   Fizika Tverdogo Tela, 66:1 (2024),  17–21
8. Light emission from single thick CdTe under high optical excitation
   
   Fizika Tverdogo Tela, 65:11 (2023),  2020–2023
9. Optical properties of heterostructure CdTe/CdMgTe doped in various ways
   
   Fizika Tverdogo Tela, 65:2 (2023),  325–327
10. Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe heterostructures with quantum wells separated by thick barriers
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  555–558
11. Kinetics of spontaneous formation of core shell structure in (In,Ga)As nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:3 (2022),  32–35
12. Parameter-free model of self-catalyzed growth of Ga(As, P) nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  969–972
13. Nonlinear bleaching of InAs nanowires in the visible range
    
    Optics and Spectroscopy, 128:1 (2020),  128–133
14. Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  952–957
15. MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  542
16. Growth kinetics of planar nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020),  15–18
17. Free energy of nucleus formation during growth of III–V semiconductor nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:18 (2020),  3–6
18. The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  37–40
19. Growth of GaN nanotubes and nanowires on Au–Ni catalysts
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  38–41
20. Solar cell based on core/shell nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1464–1468
21. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
22. Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  509
23. Luminescence of ZnMnTe/ZnMgTe heterostructures with monolayer manganese inclusions in ZnTe quantum wells and its behavior in a magnetic field
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  481
24. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
25. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
26. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
27. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
28. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
29. Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
    
    Fizika Tverdogo Tela, 58:12 (2016),  2314–2318
30. Optical properties of zinc telluride with cadmium telluride submonolayers
    
    Fizika Tverdogo Tela, 58:10 (2016),  2034–2037
31. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
32. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
33. Photoelectric properties of an array of axial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  71–79
34. Computer simulation of the structure and Raman spectra of GaAs polytypes
    
    Fizika Tverdogo Tela, 55:6 (2013),  1132–1141
35. Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1356–1360
36. Photovoltaic properties of GaAs:Be nanowire arrays
    
    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  797–801
37. Specific features of Raman spectra of III–V nanowhiskers
    
    Fizika Tverdogo Tela, 53:7 (2011),  1359–1366